View BLF6G20-45_2254806.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product pro?le 1.1 general description 45 w ldmos power transistor for base station applications at frequencies from 1800 mhz to 2000 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 7.5 db at 0.01 % probability on ccdf per carrier; carrier spacing 5 mhz. 1.2 features n typical 2-carrier w-cdma performance at frequencies of 1805 mhz and 1880 mhz, a supply voltage of 28 v and an i dq of 360 ma: u average output power = 2.5 w u power gain = 19.2 db (typ) u ef?ciency = 14 % u acpr = - 50 dbc n easy power control n integrated esd protection n excellent ruggedness n high ef?ciency n excellent thermal stability n designed for broadband operation (1800 mhz to 2000 mhz) n internally matched for ease of use n compliant to directive 2002/95/ec, regarding restriction of hazardous substances (rohs) BLF6G20-45; blf6g20s-45 power ldmos transistor rev. 02 25 august 2008 product data sheet table 1. typical performance rf performance at t case = 25 c in a common source class-ab production test circuit. mode of operation f v ds p l(av) g p h d acpr (mhz) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 1805 to 1880 28 2.5 19.2 14 - 50 [1] caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
BLF6G20-45_blf6g20s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 25 august 2008 2 of 12 nxp semiconductors BLF6G20-45; blf6g20s-45 power ldmos transistor 1.3 applications n rf power ampli?ers for w-cdma base stations and multi carrier applications in the 1800 mhz to 2000 mhz frequency range. 2. pinning information [1] connected to ?ange. 3. ordering information 4. limiting values table 2. pinning pin description simpli?ed outline graphic symbol BLF6G20-45 (sot608a) 1 drain 2 gate 3 source [1] blf6g20s-45 (sot608b) 1 drain 2 gate 3 source [1] 1 2 3 sym112 1 3 2 1 2 3 sym112 1 3 2 table 3. ordering information type number package name description version BLF6G20-45 - ?anged ceramic package; 2 mounting holes; 2 leads sot608a blf6g20s-45 - ceramic earless ?anged package; 2 leads sot608b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage - 0.5 +13 v i d drain current - 13 a t stg storage temperature - 65 +150 c t j junction temperature - 225 c
BLF6G20-45_blf6g20s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 25 august 2008 3 of 12 nxp semiconductors BLF6G20-45; blf6g20s-45 power ldmos transistor 5. thermal characteristics 6. characteristics 7. application information 7.1 ruggedness in class-ab operation the BLF6G20-45 and blf6g20s-45 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds = 28 v; i dq = 360 ma; p l = 45 w (cw); f = 1880 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 c; p l(av) = 12.5 w 1.7 k/w table 6. characteristics t j = 25 c per section; unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 0.5 ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 72 ma 1.4 1.9 2.4 v v gsq gate-source quiescent voltage v ds =28v;i d = 300 ma 1.70 2.30 2.79 v i dss drain leakage current v gs =0v; v ds =28v - - 1.5 m a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v - 12.5 - a i gss gate leakage current v gs = 11 v; v ds = 0 v - - 150 na g fs forward transconductance v ds =10v; i d = 3.6 a - 5 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 2.5 a - 0.2 - w table 7. application information mode of operation: 2-carrier w-cdma; par 7.5 db at 0.01 % probability on ccdf; 3gpp test model 1; 1 to 64 pdpch; f 1 = 1802.5 mhz; f 2 = 1807.5 mhz; f 3 = 1872.5 mhz; f 4 = 1877.5 mhz; rf performance at v ds = 28 v; i dq = 360 ma; t case = 25 c; unless otherwise speci?ed; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 2.5 w 18.3 19.2 20.8 db rl in input return loss p l(av) = 2.5 w - - 10 - 6.5 db h d drain ef?ciency p l(av) = 2.5 w 12 14 - % acpr adjacent channel power ratio p l(av) = 2.5 w - - 50 - 46 dbc
BLF6G20-45_blf6g20s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 25 august 2008 4 of 12 nxp semiconductors BLF6G20-45; blf6g20s-45 power ldmos transistor v ds =28v; i dq = 360 ma; f = 1842 mhz. fig 1. one-tone cw power gain and drain ef?ciency as functions of load power; typical values 001aah545 p l (w) 050 40 20 30 10 16 18 14 20 22 g p (db) 12 30 40 20 50 60 h d (%) 10 g p h d v ds =28v; i dq = 360 ma; f 1 = 1843 mhz; f 2 = 1843.1 mhz. v ds = 28 v; i dq = 360 ma; f 1 = 1843 mhz; f 2 = 1843.1 mhz. fig 2. two-tone cw power gain and drain ef?ciency as functions of peak envelope load power; typical values fig 3. two-tone cw intermodulation distortion as a function of peak envelope load power; typical values 001aah546 p l(pep) (w) 025 20 10 15 5 17 19 21 g p (db) 15 20 40 60 h d (%) 0 g p h d 001aah547 p l(pep) (w) 025 20 10 15 5 - 60 - 40 - 20 imd (dbc) - 80 imd3 imd5 imd7
BLF6G20-45_blf6g20s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 25 august 2008 5 of 12 nxp semiconductors BLF6G20-45; blf6g20s-45 power ldmos transistor 8. test information v ds =28v; i dq = 360 ma; f 1 = 1840.5 mhz; f 2 = 1845.5 mhz; carrier spacing 5 mhz. v ds = 28 v; i dq = 360 ma; f 1 = 1840.5 mhz; f 2 = 1845.5 mhz; carrier spacing 5 mhz. fig 4. 2-carrier w-cdma power gain and drain ef?ciency as functions of average load power; typical values fig 5. 2-carrier w-cdma adjacent power channel ratio as function of average load power; typical values 001aah548 p l(av) (w) 015 12 69 3 19 21 17 23 25 g p (db) 15 20 30 10 40 50 h d (%) 0 g p h d 001aah549 p l(av) (w) 015 12 69 3 - 40 - 50 - 30 - 20 acpr (dbc) - 60 see t ab le 8 for list of components. fig 6. test circuit for operation at 1805 mhz and 1880 mhz 001aah550 c13 c14 v dd v gg c3 c4 c5 c6 c1 c7 c12 c11 c10 c9 c8 c16 c2 r1 c15 output 50 w input 50 w
BLF6G20-45_blf6g20s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 25 august 2008 6 of 12 nxp semiconductors BLF6G20-45; blf6g20s-45 power ldmos transistor striplines are on a double copper-clad rogers duroid 5880 printed-circuit board (pcb) ( e r = 2.2), thickness = 0.79 mm. see t ab le 8 for list of components. fig 7. component layout for 1805 mhz and 1880 mhz test circuit 001aah551 c1 c2 c9 c11 c8 c10 c12 c13 c14 c16 c15 c7 c4 c5 r1 c6 c3
BLF6G20-45_blf6g20s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 25 august 2008 7 of 12 nxp semiconductors BLF6G20-45; blf6g20s-45 power ldmos transistor [1] american technical ceramics type 100b or capacitor of same quality. [2] american technical ceramics type 100a or capacitor of same quality. table 8. list of components for test circuit, see figure 6 and figure 7 . component description value remarks c1 multilayer ceramic chip capacitor 0.7 pf [1] c2 multilayer ceramic chip capacitor 3.9 pf [1] c3, c13 tantalum capacitor 10 m f c4, c5 multilayer ceramic chip capacitor 1.5 m f c6, c10 multilayer ceramic chip capacitor 10 pf [1] c7 multilayer ceramic chip capacitor 1.2 pf [1] c8, c9 multilayer ceramic chip capacitor 100 nf c11 multilayer ceramic chip capacitor 220 nf c12 multilayer ceramic chip capacitor 4.7 m f c14 philips electrolytic capacitor 220 m f, 63 v c15, c16 multilayer ceramic chip capacitor 6.8 pf [2] r1 philips chip resistor 5.6 w
BLF6G20-45_blf6g20s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 25 august 2008 8 of 12 nxp semiconductors BLF6G20-45; blf6g20s-45 power ldmos transistor 9. package outline fig 8. package outline sot608a references outline version european projection issue date iec jedec eiaj sot608a 01-02-22 02-02-11 0 5 10 mm scale flanged ceramic package; 2 mounting holes; 2 leads sot608a p a f b d u 2 h q c 1 3 2 d 1 e a w 1 ab m m m c q u 1 c b e 1 m m w 2 unit a mm d b 7.24 6.99 0.15 0.10 10.21 10.01 10.29 10.03 15.75 14.73 9.91 9.65 4.62 3.76 c u 2 0.25 0.51 15.24 qw 2 w 1 f 1.14 0.89 u 1 20.45 20.19 p 3.30 2.92 q 1.70 1.35 ee 1 10.21 10.01 inches 0.285 0.275 0.006 0.004 0.402 0.394 d 1 10.29 10.03 0.405 0.395 0.405 0.395 0.620 0.580 0.390 0.380 0.182 0.148 0.010 0.020 0.600 0.045 0.035 0.805 0.795 0.130 0.115 0.067 0.053 0.402 0.394 h dimensions (millimetre dimensions are derived from the original inch dimensions)
BLF6G20-45_blf6g20s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 25 august 2008 9 of 12 nxp semiconductors BLF6G20-45; blf6g20s-45 power ldmos transistor fig 9. package outline sot608b references outline version european projection issue date iec jedec jeita sot608b sot608b 06-11-27 06-12-06 unit a mm 4.62 3.76 7.24 6.99 0.15 0.10 10.29 10.03 10.21 10.01 10.29 10.03 1.14 0.89 1.70 1.35 10.24 9.98 0.51 b dimensions (mm dimensions are derived from the original inch dimensions) ceramic earless flanged package; 2 leads 0 5 mm scale c d 10.21 10.01 d 1 e e 1 f h 15.75 14.73 q u 1 u 2 10.24 9.98 inch 0.182 0.148 0.285 0.275 0.006 0.004 0.405 0.395 0.402 0.394 0.405 0.395 0.045 0.035 0.067 0.053 0.403 0.393 0.020 0.402 0.394 0.620 0.580 0.403 0.393 w 1 m w 1 a m 1 2 b h a 3 d a f d 1 u 1 e e 1 u 2 c q
BLF6G20-45_blf6g20s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 25 august 2008 10 of 12 nxp semiconductors BLF6G20-45; blf6g20s-45 power ldmos transistor 10. abbreviations 11. revision history table 9. abbreviations acronym description 3gpp third generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel imd intermodulation distortion ldmos laterally diffused metal oxide semiconductor par peak-to-average power ratio pdpch transmission power of the dedicated physical channel rf radio frequency vswr voltage standing wave ratio w-cdma wideband code division multiple access table 10. revision history document id release date data sheet status change notice supersedes BLF6G20-45_blf6g20s-45_2 20080825 product data sheet - BLF6G20-45_1 modi?cations: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? the document now describes both the eared and earless version of this product: BLF6G20-45 and blf6g20s-45 respectively. BLF6G20-45_1 20060220 objective data sheet - -
BLF6G20-45_blf6g20s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 25 august 2008 11 of 12 nxp semiconductors BLF6G20-45; blf6g20s-45 power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors BLF6G20-45; blf6g20s-45 power ldmos transistor ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 25 august 2008 document identifier: BLF6G20-45_blf6g20s-45_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation. . . . . . . . . . 3 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 contact information. . . . . . . . . . . . . . . . . . . . . 11 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

▲Up To Search▲

Price & Availability of BLF6G20-45

	To Download BLF6G20-45 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .